Polymer field-effect transistors fabricated by the sequential gravure printing of polythiophene, two insulator layers, and a metal ink gate

Voigt, M.M.M.M.VoigtGuite, A.A.GuiteChung, D.Y.D.Y.ChungKhan, R.U.A.R.U.A.KhanCampbell, A.J.A.J.CampbellBradley, D.D.C.D.D.C.BradleyMeng, F.S.F.S.MengSteinke, J.H.G.J.H.G.SteinkeTierney, S.S.TierneyMcCulloch, I.I.McCullochPenxten, H.H.PenxtenLutsen, LaurenceLaurenceLutsenDouheret, OlivierOlivierDouheretManca, JeanJeanMancaBrokman, U.U.BrokmanSonnichsen, K.K.SonnichsenHulsenberg, D.D.HulsenbergBock, W.W.BockBarron, C.C.BarronBlanckaert, N.N.BlanckaertSpringer, S.S.SpringerGrupp, J.J.GruppMosley, A.A.Mosley2021-10-192021-10-1920101616-301Xhttps://imec-publications.be/handle/20.500.12860/18314Polymer field-effect transistors fabricated by the sequential gravure printing of polythiophene, two insulator layers, and a metal ink gateJournal article