Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance

Higashi, YusukeYusukeHigashiBastos, JoaoJoaoBastosVaisman Chasin, AdrianAdrianVaisman ChasinBreuil, LaurentLaurentBreuilArreghini, AntonioAntonioArreghiniRamesh, SivaSivaRameshRachidi, SanaSanaRachidiJeong, YongbinYongbinJeongVan den Bosch, GeertGeertVan den BoschRosmeulen, MaartenMaartenRosmeulen2024-08-162024-08-162024979-8-3503-6977-91541-7026WOS:001229691100086https://imec-publications.be/handle/20.500.12860/44318Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and EnduranceProceedings paper10.1109/IRPS48228.2024.10529409979-8-3503-6976-2WOS:001229691100086BREAKDOWNDEGRADATIONSILICON