Mobility and dielectric quality of 1-nm EOT HfSiON on Si(110) and (100)

Trojman, LionelLionelTrojmanPantisano, LuigiLuigiPantisanoFerain, IsabelleIsabelleFerainSeveri, SimoneSimoneSeveriMaes, HermanHermanMaesGroeseneken, GuidoGuidoGroeseneken2021-10-172021-10-1720080018-9383https://imec-publications.be/handle/20.500.12860/14582Mobility and dielectric quality of 1-nm EOT HfSiON on Si(110) and (100)Journal article