Houssa, MichelMichelHoussaAutran, J.L.J.L.AutranHeyns, MarcMarcHeynsStesmans, AndreAndreStesmans2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7665Model for defect generation at the (100) Si/SiO2 interface during electron injection in MOS structuresJournal article