Influence of fin width and channel length on the performance of buffers implemented with standard and strained triple-gate nFinFETs

Pavanello, M.A.M.A.PavanelloMartino, J.A.J.A.MartinoSimoen, EddyEddySimoenRooyackers, RitaRitaRooyackersCollaert, NadineNadineCollaertClaeys, CorCorClaeys2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15998Influence of fin width and channel length on the performance of buffers implemented with standard and strained triple-gate nFinFETsProceedings paper