Transient effects in accumulation mode p-channel SOI MOSFETs operating at 77K

Martino, Joao AntonioJoao AntonioMartinoRotondaro, AntonioAntonioRotondaroSimoen, EddyEddySimoenMagnusson, UlfUlfMagnussonClaeys, CorCorClaeys2021-09-292021-09-291994https://imec-publications.be/handle/20.500.12860/245Transient effects in accumulation mode p-channel SOI MOSFETs operating at 77KJournal article