1/f noise in fully integrated electrolytically gated FinFETs with fin width down to 20nm

Martens, KoenKoenMartensDu Bois, BertBertDu BoisVan Roy, WimWimVan RoySeveri, SimoneSimoneSeveriSiew, Yong KongYong KongSiewGupta, AnshulAnshulGuptaDupuy, EmmanuelEmmanuelDupuyRadisic, DunjaDunjaRadisicAltamirano Sanchez, EfrainEfrainAltamirano SanchezSimoen, EddyEddySimoen2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/335521/f noise in fully integrated electrolytically gated FinFETs with fin width down to 20nmMeeting abstracthttps://infoscience.epfl.ch/record/269192