New carbon-based thermal stability improvement technique for NiPtSi used in CMOS technology

Ortolland, ClaudeClaudeOrtollandTogo, MitsuhiroMitsuhiroTogoRosseel, ErikErikRosseelMertens, SofieSofieMertensKittl, JorgeJorgeKittlLauwers, AnneAnneLauwersHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17748New carbon-based thermal stability improvement technique for NiPtSi used in CMOS technologyOral presentation