Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise

Magnone, PaoloPaoloMagnoneCrupi, FeliceFeliceCrupiPantisano, LuigiLuigiPantisanoPace, CalogeroCalogeroPace2021-10-162021-10-162007-02https://imec-publications.be/handle/20.500.12860/12539Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noiseJournal article