Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-kappa insulators

Zhang, YanYanZhangFischetti, MassimoMassimoFischettiSoree, BartBartSoreeO'Regan, TerranceTerranceO'Regan2021-10-192021-10-1920100021-8979https://imec-publications.be/handle/20.500.12860/18420Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-kappa insulatorsJournal article