A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack

Chang, VincentVincentChangRagnarsson, Lars-AkeLars-AkeRagnarssonPourtois, GeoffreyGeoffreyPourtoisO'Connor, RobertRobertO'ConnorAdelmann, ChristophChristophAdelmannVan Elshocht, SvenSvenVan ElshochtDelabie, AnneliesAnneliesDelabieSwerts, JohanJohanSwertsVan der Heyden, NikolaasNikolaasVan der HeydenConard, ThierryThierryConardCho, Hag-JuHag-JuChoAkheyar, AmalAmalAkheyarMitsuhashi, RiichirouRiichirouMitsuhashiWitters, ThomasThomasWittersO'Sullivan, BarryBarryO'SullivanPantisano, LuigiLuigiPantisanoRohr, ErikaErikaRohrLehnen, PeerPeerLehnenKubicek, StefanStefanKubicekSchram, TomTomSchramDe Gendt, StefanStefanDe GendtAbsil, PhilippePhilippeAbsilBiesemans, SergeSergeBiesemans2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/11840A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stackProceedings paper