3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525°C with improved reliability

Vandooren, AnneAnneVandoorenFranco, JacopoJacopoFrancoParvais, BertrandBertrandParvaisWu, ZhichengZhichengWuWitters, LiesbethLiesbethWittersWalke, AmeyAmeyWalkeLi, WaikinWaikinLiPeng, LanLanPengDeshpande, Veeresh VidyadharVeeresh VidyadharDeshpandeBufler, FabianFabianBuflerRassoul, NouredineNouredineRassoulHellings, GeertGeertHellingsJamieson, GeraldineGeraldineJamiesonInoue, FumihiroFumihiroInoueVerbinnen, GreetGreetVerbinnenDevriendt, KatiaKatiaDevriendtTeugels, LieveLieveTeugelsHeylen, NancyNancyHeylenVecchio, EmmaEmmaVecchioTao, ZhengZhengTaoRosseel, ErikErikRosseelVanherle, WendyWendyVanherleHikavyy, AndriyAndriyHikavyyChan, BTBTChanRitzenthaler, RomainRomainRitzenthalerBesnard, GuillaumeGuillaumeBesnardSchwarzenbach, WalterWalterSchwarzenbachGaudin, GweltazGweltazGaudinRadu, IonutIonutRaduNguyen, Bich-YenBich-YenNguyenWaldron, NiamhNiamhWaldronDe Heyn, VincentVincentDe HeynMocuta, DanDanMocutaCollaert, NadineNadineCollaert2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/321373D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525°C with improved reliabilityProceedings paperhttps://ieeexplore.ieee.org/document/8510705