Titanium (germano-)silicides featuring 10-9 $Xcm2 contact resistivity and improved compatibility to advanced CMOS technology

Yu, HaoHaoYuSchaekers, MarcMarcSchaekersChew, Soon AikSoon AikChewEveraert, Jean-LucJean-LucEveraertDabral, AshishAshishDabralPourtois, GeoffreyGeoffreyPourtoisHoriguchi, NaotoNaotoHoriguchiMocuta, DanDanMocutaCollaert, NadineNadineCollaertDe Meyer, KristinKristinDe Meyer2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/32342Titanium (germano-)silicides featuring 10-9 $Xcm2 contact resistivity and improved compatibility to advanced CMOS technologyProceedings paperhttps://ieeexplore.ieee.org/document/8330298/