Swerts, JohanJohanSwertsPeys, NickNickPeysNyns, LauraLauraNynsDelabie, AnneliesAnneliesDelabieFranquet, AlexisAlexisFranquetMaes, JanJanMaesVan Elshocht, SvenSvenVan ElshochtDe Gendt, StefanStefanDe Gendt2021-10-182021-10-1820100013-4651https://imec-publications.be/handle/20.500.12860/18058Impact of precursor chemistry and process conditions on the scalability of ALD HfO2 gate dielectricsJournal article