3D TCAD model for poly-Si channel current and variability in vertical NAND flash memory

Verreck, DevinDevinVerreckArreghini, AntonioAntonioArreghiniSchanovsky, FranzFranzSchanovskyStanojevic, ZlatanZlatanStanojevicSteiner, K.K.SteinerMitterbauer, F.F.MitterbauerKarner, MarkusMarkusKarnerVan den Bosch, GeertGeertVan den BoschFurnemont, ArnaudArnaudFurnemont2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/343773D TCAD model for poly-Si channel current and variability in vertical NAND flash memoryProceedings paper