ESD characterization of high mobility SiGe quantum well and Ge devices for future CMOS scaling

Hellings, GeertGeertHellingsLinten, DimitriDimitriLintenThijs, StevenStevenThijsChen, Shih-HungShih-HungChenWitters, LiesbethLiesbethWittersMitard, JeromeJeromeMitardZografos, OdysseasOdysseasZografosGroeseneken, GuidoGuidoGroeseneken2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20798ESD characterization of high mobility SiGe quantum well and Ge devices for future CMOS scalingProceedings paper