Kim, Jin JuJin JuKimCho, Moon JuMoon JuChoPantisano, LuigiLuigiPantisanoChiarella, ThomasThomasChiarellaTogo, MitsuhiroMitsuhiroTogoHoriguchi, NaotoNaotoHoriguchiGroeseneken, GuidoGuidoGroesenekenLee, Byoung HunByoung HunLee2021-10-202021-10-2020120741-3106https://imec-publications.be/handle/20.500.12860/20936Process dependent N/PBTI characteristics of TiN gate FinFETsJournal article