Ultra-Fast Positive Gate Bias Stress ( 100ns) to Understand the Hole Injection in Power p-GaN HEMTs

Huang, Zhen-HongZhen-HongHuangLin, Wei-SyuanWei-SyuanLinLo, Ting-ChunTing-ChunLoTang, Shun-WeiShun-WeiTangChen, Szu-ChiaSzu-ChiaChenWellekens, DirkDirkWellekensBorga, MatteoMatteoBorgaPosthuma, NielsNielsPosthumaBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutereWu, Tian-LiTian-LiWu2026-03-162026-03-162023https://imec-publications.be/handle/20.500.12860/58838Ultra-fast positive gate bias stress (<100ns) in p-GaN HEMTs is reported for the first time to investigate the hole injection/trapping phenomena in power p-GaN HEMTs, including the analysis from the time-dependent TCAD simulations. The results indicate that the negative threshold voltage (VTH) shift caused by the hole injection and trapping can be minimized under the ultra-fast positive gate bias, suggesting that p-GaN power HEMTs are promising for the fast turn-on operation that can be immune to PBTI instability.engUltra-Fast Positive Gate Bias Stress ( 100ns) to Understand the Hole Injection in Power p-GaN HEMTsProceedings paper10.1109/ispsdWOS:001594530900036V-TH