Evidence that two tightly coupled mechanisms are responsible for negative bias temperature instability in oxynitride MOSFETs

Grasser, TiborTiborGrasserKaczer, BenBenKaczer2021-10-172021-10-172009-050018-9383https://imec-publications.be/handle/20.500.12860/15393Evidence that two tightly coupled mechanisms are responsible for negative bias temperature instability in oxynitride MOSFETsJournal article