Masahara, MeishokuMeishokuMasaharaSurdeanu, RaduRaduSurdeanuWitters, LiesbethLiesbethWittersDoornbos, GerbenGerbenDoornbosNguyen Hoang, VietVietNguyen HoangVan den Bosch, GeertGeertVan den BoschVrancken, ChristaChristaVranckenDevriendt, KatiaKatiaDevriendtNeuilly, FrancoisFrancoisNeuillyKunnen, EddyEddyKunnenJurczak, GosiaGosiaJurczakBiesemans, SergeSergeBiesemans2021-10-162021-10-162007-03https://imec-publications.be/handle/20.500.12860/12564Demonstration of asymmetric gate-oxide thickness four-terminal FinFETs having flexible threshold voltage and good subthreshold slopeJournal article