Epitaxial growth of active Si on top of SiGe etch stop layer in view of 3D device integration

Loo, RogerRogerLooJourdain, AnneAnneJourdainRengo, GianlucaGianlucaRengoPorret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyyLiebens, MaartenMaartenLiebensBecker, LucasLucasBeckerStorck, PeterPeterStorckBeyer, GeraldGeraldBeyerBeyne, EricEricBeyne2021-10-292021-10-292020-09https://imec-publications.be/handle/20.500.12860/35502Epitaxial growth of active Si on top of SiGe etch stop layer in view of 3D device integrationProceedings paperhttps://iopscience.iop.org/article/10.1149/09804.0157ecst/pdf