Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model

Degraeve, RobinRobinDegraeveToledano Luque, MariaMariaToledano LuqueArreghini, AntonioAntonioArreghiniTang, BaojunBaojunTangCapogreco, ElenaElenaCapogrecoLisoni, JuditJuditLisoniRoussel, PhilippePhilippeRousselKaczer, BenBenKaczerVan den Bosch, GeertGeertVan den BoschGroeseneken, GuidoGuidoGroesenekenVan Houdt, JanJanVan Houdt2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22239Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network modelProceedings paper