A unified approach for hot-carrier degradation of DC current gain and 1/f noise of bipolar transistors

Decoutere, StefaanStefaanDecoutereSimoen, EddyEddySimoenVancuyck, GeertGeertVancuyckDeferm, LudoLudoDefermClaeys, CorCorClaeys2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/1838A unified approach for hot-carrier degradation of DC current gain and 1/f noise of bipolar transistorsProceedings paper