Characterization of interstitial related defects in p-silicon substrates by homoepitaxial

Schmolke, R.R.SchmolkeAngelberger, W.W.Angelbergervon Ammon, W.W.von AmmonBender, HugoHugoBender2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5635Characterization of interstitial related defects in p-silicon substrates by homoepitaxialProceedings paper