Cost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)

Lauwers, AnneAnneLauwersVeloso, AnabelaAnabelaVelosoChang, Shou-ZenShou-ZenChangYu, HongYuHongYuYuHoffmann, Thomas Y.Thomas Y.HoffmannKerner, ChristophChristophKernerDemand, MarcMarcDemandRothschild, AudeAudeRothschildNiwa, MasaakiMasaakiNiwaSatoru, ItoItoSatoruMitshashi, RiichirouRiichirouMitshashiAmeen, MikeMikeAmeenWhittemore, GrahamGrahamWhittemorePawlak, MalgorzataMalgorzataPawlakVrancken, ChristaChristaVranckenDemeurisse, CarolineCarolineDemeurisseMertens, SofieSofieMertensVandervorst, WilfriedWilfriedVandervorstAbsil, PhilippePhilippeAbsilBiesemans, SergeSergeBiesemansKittl, JorgeJorgeKittl2021-10-172021-10-1720080741-3106https://imec-publications.be/handle/20.500.12860/13995Cost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)Journal article