Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition

You, ShuzhenShuzhenYouDecoutere, StefaanStefaanDecoutereNguyen, DuyDuyNguyenVan Huylenbroeck, StefaanStefaanVan HuylenbroeckSibaja-Hernandez, ArturoArturoSibaja-HernandezVenegas, RafaelRafaelVenegasLoo, RogerRogerLooDe Meyer, KristinKristinDe Meyer2021-10-202021-10-2020120040-6090https://imec-publications.be/handle/20.500.12860/21896Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor depositionJournal article