On the use of indium and gallium as p-type dopants in Si 0.1 μm MOSFETs

Biesemans, SergeSergeBiesemansKubicek, StefanStefanKubicekVan Laer, JorisJorisVan LaerLoosen, FredFredLoosenGeenen, LucLucGeenenMaex, KarenKarenMaexDe Meyer, KristinKristinDe Meyer2021-09-292021-09-291995https://imec-publications.be/handle/20.500.12860/526On the use of indium and gallium as p-type dopants in Si 0.1 μm MOSFETsProceedings paper