Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

Nguyen, DuyDuyNguyenRosseel, ErikErikRosseelTakeuchi, ShotaroShotaroTakeuchiEveraert, Jean-LucJean-LucEveraertYang, LijunLijunYangGoossens, JozefienJozefienGoossensMoussa, AlainAlainMoussaClarysse, TrudoTrudoClarysseRichard, OlivierOlivierRichardBender, HugoHugoBenderZaima, S.S.ZaimaSakai, A.A.SakaiLoo, RogerRogerLooLin, J.C.J.C.LinVandervorst, WilfriedWilfriedVandervorstCaymax, MattyMattyCaymax2021-10-182021-10-1820100040-6090https://imec-publications.be/handle/20.500.12860/17689Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technologyJournal article