Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration

Porret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyyGomez Granados, Juan FernandoJuan FernandoGomez GranadosBaudot, SylvainSylvainBaudotVohra, AnuragAnuragVohraKunert, BernardetteBernardetteKunertDouhard, BastienBastienDouhardBogdanowicz, JanuszJanuszBogdanowiczSchaekers, MarcMarcSchaekersKohen, DavidDavidKohenMargetis, JoeJoeMargetisTolle, JohnJohnTollePetersen Barbosa Lima, LucasLucasPetersen Barbosa LimaSammak, AmirAmirSammakScappucci, GiordanoGiordanoScappucciRosseel, ErikErikRosseelLanger, RobertRobertLangerLoo, RogerRogerLoo2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/31555Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integrationProceedings paperhttp://ecst.ecsdl.org/content/86/7/163.short