Copper through silicon via induced keep out zone for 10nm node bulk FinFET CMOS technology

Guo, WeiWeiGuoMoroz, VictorVictorMorozVan der Plas, GeertGeertVan der PlasChoi, M.M.ChoiRedolfi, AugustoAugustoRedolfiSmith, L.L.SmithEneman, GeertGeertEnemanVan Huylenbroeck, StefaanStefaanVan HuylenbroeckSu, P.D.P.D.SuIvankovic, AndrejAndrejIvankovicDe Wachter, BartBartDe WachterDebusschere, IngridIngridDebusschereCroes, KrisKrisCroesDe Wolf, IngridIngridDe WolfMercha, AbdelkarimAbdelkarimMerchaBeyer, GeraldGeraldBeyerSwinnen, BartBartSwinnenBeyne, EricEricBeyne2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22441Copper through silicon via induced keep out zone for 10nm node bulk FinFET CMOS technologyProceedings paper