A new method to fabricate Ge nanowires: selective lateral etching of GeSn:P-Ge multi-stacks

Porret, ClémentClémentPorretVohra, AnuragAnuragVohraSebaai, FaridFaridSebaaiDouhard, BastienBastienDouhardHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLoo2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/31557A new method to fabricate Ge nanowires: selective lateral etching of GeSn:P-Ge multi-stacksProceedings paperhttps://www.scientific.net/SSP.282.113