TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses

Bonaldo, StefanoStefanoBonaldoGorchichko, MariiaMariiaGorchichkoZhang, En XiaEn XiaZhangMa, TengTengMaMattiazzo, SerenaSerenaMattiazzoBagatin, MartaMartaBagatinPaccagnella, AlessandroAlessandroPaccagnellaGerardin, SimoneSimoneGerardinSchrimpf, Ronald D.Ronald D.SchrimpfReed, Robert A.Robert A.ReedLinten, DimitriDimitriLintenMitard, JeromeJeromeMitardFleetwood, Daniel M.Daniel M.Fleetwood2022-11-252022-07-312022-11-2520220018-9499WOS:000828698900018https://imec-publications.be/handle/20.500.12860/40187TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh DosesJournal article10.1109/TNS.2022.3142385WOS:000828698900018LOW-FREQUENCY NOISE1/F NOISEIONIZING-RADIATIONINTERFACE STATESINGAAS FINFETSBORDER TRAPSX-RAYBIAS DEPENDENCEMOSBULK