High quality GaN based structures grown on large size Si(111) substrates using interlayers by MOVPE

Cheng, KaiKaiChengLeys, MaartenMaartenLeysDegroote, StefanStefanDegrooteDerluyn, JoffJoffDerluynSijmus, BramBramSijmusFavia, PaolaPaolaFaviaBender, HugoHugoBenderGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/11848High quality GaN based structures grown on large size Si(111) substrates using interlayers by MOVPEOral presentation