Phosphorous doped (110) homoepitaxial diamond films: infuence of the substrate miscut angle on growth and electrical transport

Balasubramanian, Y.Y.BalasubramanianRobaeys, P.P.RobaeysJanssens, S.D.S.D.JanssensD'Haen, JanJanD'HaenHaenen, KenKenHaenen2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20341Phosphorous doped (110) homoepitaxial diamond films: infuence of the substrate miscut angle on growth and electrical transportOral presentation