Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors

Takakura, KenichiroKenichiroTakakuraPutcha, VamsiVamsiPutchaSimoen, EddyEddySimoenAlian, AliRezaAliRezaAlianPeralagu, UthayasankaranUthayasankaranPeralaguWaldron, NiamhNiamhWaldronParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaert2022-01-202021-11-022022-01-2020200268-1242WOS:000599777700001https://imec-publications.be/handle/20.500.12860/38376Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistorsJournal article10.1088/1361-6641/abce8cWOS:000599777700001