Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures

Tang, HongweiHongweiTangBelmonte, AttilioAttilioBelmonteLin, DennisDennisLinZhao, YingYingZhaoBeckers, ArnoutArnoutBeckersVerdonck, PatrickPatrickVerdonckDekkers, HendrikHendrikDekkersSubhechha, SubhaliSubhaliSubhechhavan Setten, MichielMichielvan SettenChen, ZhuoZhuoChenKar, Gouri SankarGouri SankarKarVan Houdt, JanJanVan HoudtAfanasiev, ValeriValeriAfanasiev2025-06-222025-06-222025-JUN 90003-6951WOS:001508418800006https://imec-publications.be/handle/20.500.12860/45827Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperaturesJournal article10.1063/5.0271394WOS:001508418800006MOBILITY EDGESDEPENDENCEDEVICES