Richard, OlivierOlivierRichardVincent, BenjaminBenjaminVincentFavia, PaolaPaolaFaviaLagrain, PieterPieterLagrainBender, HugoHugoBender2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22994SiGe epitaxially grown in nano-trenches on Si substrateProceedings paper