Influence of germanium content on the degradation of strained Si1-xGex epitaxial diodes by electron irradiation

Ohyama, HidenoriHidenoriOhyamaVanhellemont, JanJanVanhellemontSunaga, H.H.SunagaPoortmans, JefJefPoortmansCaymax, MattyMattyCaymaxClauws, P.P.Clauws2021-09-292021-09-291994https://imec-publications.be/handle/20.500.12860/278Influence of germanium content on the degradation of strained Si1-xGex epitaxial diodes by electron irradiationJournal article