Circuit design-oriented stochastic piecewise modeling of the postbreakdown gate current in MOSFETs: application to ring oscilators

Martin-Martinez, JavierJavierMartin-MartinezKaczer, BenBenKaczerDegraeve, RobinRobinDegraeveRoussel, PhilippePhilippeRousselRodriguez, RosanaRosanaRodriguezNafria, MonserratMonserratNafriaAymerich, X.X.AymerichDierickx, BartBartDierickxGroeseneken, GuidoGuidoGroeseneken2021-10-202021-10-2020121530-4388https://imec-publications.be/handle/20.500.12860/21115Circuit design-oriented stochastic piecewise modeling of the postbreakdown gate current in MOSFETs: application to ring oscilatorsJournal article