Threshold voltage model for deep-submicron fully depleted SOI CMOS transistors including the effect of source/drain fringing fields into the buried oxide

van Meer, HansHansvan MeerDe Meyer, KristinKristinDe Meyer2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5743Threshold voltage model for deep-submicron fully depleted SOI CMOS transistors including the effect of source/drain fringing fields into the buried oxideJournal article