A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation

Arimura, HiroakiHiroakiArimuraCott, DaireDaireCottBoccardi, GuillaumeGuillaumeBoccardiLoo, RogerRogerLooWostyn, KurtKurtWostynBrus, StephanStephanBrusCapogreco, ElenaElenaCapogrecoOpdebeeck, AnnAnnOpdebeeckWitters, LiesbethLiesbethWittersConard, ThierryThierryConardSuhard, SamuelSamuelSuhardvan Dorp, DennisDennisvan DorpKenis, KarineKarineKenisRagnarsson, Lars-AkeLars-AkeRagnarssonMitard, JeromeJeromeMitardHolsteyns, FrankFrankHolsteynsDe Heyn, VincentVincentDe HeynMocuta, DanDanMocutaCollaert, NadineNadineCollaertHoriguchi, NaotoNaotoHoriguchi2021-10-272021-10-272019-06https://imec-publications.be/handle/20.500.12860/32452A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparationProceedings paper