Breuil, LaurentLaurentBreuillisoni, Judit, G.Judit, G.lisoniDelhougne, RomainRomainDelhougneTan, Chi LimChi LimTanVan Houdt, JanJanVan HoudtVan den Bosch, GeertGeertVan den BoschFurnemont, ArnaudArnaudFurnemont2021-10-232021-10-232016-05https://imec-publications.be/handle/20.500.12860/26382Passivation of poly-Si channel vertical NAND devices du high pressure annealingProceedings paper