Low-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platform

Claeys, CorCorClaeysAgopian, PaulaPaulaAgopianAlian, AliRezaAliRezaAlianArimura, HiroakiHiroakiArimuraFang, WenWenFangMartino, JoaoJoaoMartinoMitard, JeromeJeromeMitardNeves, FelipeFelipeNevesOliveira, AlbertoAlbertoOliveiraSimoen, EddyEddySimoen2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26458Low-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platformProceedings paperhttp://ieeexplore.ieee.org/document/7998900/