Mobility improvement study for 8-Å-EOT HfO2 UTBB-FD-SOI-MOSFET based on the direct extraction of the back channel mobility

Trojman, LionelLionelTrojmanRagnarsson, Lars-AkeLars-AkeRagnarssonCollaert, NadineNadineCollaert2021-10-222021-10-222014-110018-9383https://imec-publications.be/handle/20.500.12860/24627Mobility improvement study for 8-Å-EOT HfO2 UTBB-FD-SOI-MOSFET based on the direct extraction of the back channel mobilityJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6909331