Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2/O3 Films

Mellaerts, SimonSimonMellaertsBellani, ClaudioClaudioBellaniHsu, Wei-FanWei-FanHsuBinetti, AlbertoAlbertoBinettiSchouteden, KoenKoenSchoutedenRecaman-Payo, MariaMariaRecaman-PayoMenghini, MarielaMarielaMenghiniRubio-Zuazo, JuanJuanRubio-ZuazoLopez-Sanchez, JesusJesusLopez-SanchezSeo, Jin WonJin WonSeoHoussa, MichelMichelHoussaLocquet, Jean-PierreJean-PierreLocquet2025-04-092025-04-0920241944-8244WOS:001227736000001https://imec-publications.be/handle/20.500.12860/45512Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2/O3 FilmsJournal article10.1021/acsami.3c18807WOS:001227736000001PHASE-TRANSITIONSMODELMEDLINE:38683636