Electrostatic discharge effects in fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques

Griffoni, A.A.GriffoniTazzoli, A.A.TazzoliGerardin, S.S.GerardinSimoen, EddyEddySimoenClaeys, CorCorClaeysMeneghesso, G.G.Meneghesso2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13811Electrostatic discharge effects in fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniquesProceedings paper