Electrically active defects in irradiated n-Type Czochralski silicon doped with group IV impurities

David, M.L.M.L.DavidSimoen, EddyEddySimoenClaeys, CorCorClaeysNeimash, V.V.NeimashKras'ko, M.M.Kras'koKraitchinski, A.A.KraitchinskiVoytovych, V.V.VoytovychKabaldin, A.A.KabaldinBarbot, J.F.J.F.Barbot2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8747Electrically active defects in irradiated n-Type Czochralski silicon doped with group IV impuritiesOral presentation