Interface passivation analysis of Ge/GeO2 pMOS and nMOS with and without forming gas anneal

Martens, KoenKoenMartensBellenger, FlorenceFlorenceBellengerDelabie, AnneliesAnneliesDelabieDe Jaeger, BriceBriceDe JaegerMeuris, MarcMarcMeurisGroeseneken, GuidoGuidoGroeseneken2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15836Interface passivation analysis of Ge/GeO2 pMOS and nMOS with and without forming gas annealMeeting abstract