Processing factors impacting the leakage current and flicker noise of germanium p+-n junctions on silicon substrates

Simoen, EddyEddySimoenSonde, SushantSushantSondeClaeys, CorCorClaeysSatta, AlessandraAlessandraSattaDe Jaeger, BriceBriceDe JaegerTodi, RaviRaviTodiMeuris, MarcMarcMeuris2021-10-172021-10-1720080013-4651https://imec-publications.be/handle/20.500.12860/14480Processing factors impacting the leakage current and flicker noise of germanium p+-n junctions on silicon substratesJournal article