Separation of electron and hole trapping components of PBTI in SiON nMOS transistors

Waltl, MichaelMichaelWaltlStampfer, BernhardBernhardStampferRzepa, GerhardGerhardRzepaKaczer, BenBenKaczerGrasser, TiborTiborGrasser2021-10-292021-10-2920200026-2714https://imec-publications.be/handle/20.500.12860/36298Separation of electron and hole trapping components of PBTI in SiON nMOS transistorsJournal articlehttps://doi.org/10.1016/j.microrel.2020.113746